ty n-channel 4v drive nch mos fet rsr025n03 z structure mos fet z features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (tsmt3) . z application power switching, dc / dc converter. z external dimensions (unit : mm) each lead has same dimensions (1) gate (2) source (3) drain tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.950.95 0.4 abbreviated symbol : qy z packaging specifications package code taping basic ordering unit (pieces) rsr025n03 tl 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 1 ? 2 parameter v v dss symbol 30 v v gss 20 a i d a i dp a i s a i sp w p d c tch 150 c tstg ? 55 to 150 limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature storage temperature continuous pulsed continuous source current (body diode) pulsed ? 1 pw 100 s, duty cycle 2% ? 2 mounted on a ceramic board. 2.5 10 0.8 3.2 1 z equivalent circuit ? a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use the protection circuit when the fixed voltages are exceeded. (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode (1) (2) (3) ? 2 ? 1 (3) (1) (2) z thermal resistance c / w rth (ch-a) 125 parameter symbol limits unit channel to ambient ? 2 mounted on a ceramic board. ? product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. typ. max. unit conditions gate-source leakage v (br) dss drain-source breakdown voltage i dss zero gate voltage drain current v gs (th) gate threshold voltage static drain-source on-state resistance r ds (on) forward transfer admittance input capacitance output capacitance c iss reverse transfer capacitance c oss turn-on delay time c rss rise time t d (on) turn-off delay time t r fall time t d (off) total gate charge t f gate-source charge q g gate-drain charge q gs q gd ?? 10 av gs = 20v, v ds = 0v v dd 15v 30 ?? vi d = 1ma, v gs = 0v ?? 1 av ds = 30v, v gs = 0v 1.0 ? 2.5 v v ds = 10v, i d = 1ma ? 50 70 i d = 2.5a, v gs = 10v ? 74 105 m ? i d = 2.5a, v gs = 4.5v ? 83 118 i d = 2.5a, v gs = 4v 1.5 ?? si d = 2.5a, v ds = 10v ? 165 ? pf v ds = 10v ? 55 35 ? pf v gs = 0v ? 6 ? pf f = 1mhz v gs = 10v r l = 12.0 ? r g = 10 ? ? 10 ? ns ? 20 ? ns ? 5 ? ns ? 2.9 ? ns ? 0.8 4.1 nc ? 0.9 ? nc v gs = 5v ?? nc i d = 2.5a i d = 1.25a, v dd 15v ? pulsed ? ? ? ? ? ? ? ? ? z body diode characteristics (source-drain) (ta=25 c) forward voltage v sd ?? 1.2 v i s = 3.2a, v gs = 0v parameter symbol min. typ. max. unit conditions ? pulsed ? rsr025n03 product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
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